High voltage MEMS platform for fully integrated, on-chip, vacuum electronic devices

Journal Article

We demonstrate a fully integrated, on-chip, vacuum microtriode capable of handling voltages up to 800 V. The ability to operate at such high voltages is achieved by the addition of a 10 μm-thick silicon dioxide layer to the device. The device is fabricated using MEMS fabrication principles and utilizes carbon nanotubes as field emitters. A dc amplification factor of 600 was obtained. To the best of our knowledge, this is the highest value reported for CNT-enabled microtriode devices. The high voltage capability of these microscale devices will enable their use in a wider variety of applications such as miniature ion sources and xray sources. © 2008 IEEE.

Full Text

Duke Authors

Cited Authors

  • Natarajan, S; Parker, CB; Glass, JT; Bower, CA; Gilchrist, KH; Piascik, JR; Stoner, BR

Published Date

  • September 15, 2008

Published In

  • 2008 Ieee International Vacuum Electronics Conference, Ivec With 9th Ieee International Vacuum Electron Sources Conference, Ivesc

Start / End Page

  • 24 - 25

Digital Object Identifier (DOI)

  • 10.1109/IVELEC.2008.4556325

Citation Source

  • Scopus