Epitaxial films of cobalt disilicide (100) evaporated onto Si(100) from a mixed source

Journal Article

Thin films of (100) oriented CoSi2 have been electron beam evaporated onto Si(100) substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED) pattern resulted after annealing the films to 800 °C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

Duke Authors

Cited Authors

  • Goeller, PT; Wang, Z; Sayers, DE; Glass, JT; Nemanich, RJ

Published Date

  • January 1, 1996

Published In

Volume / Issue

  • 402 /

Start / End Page

  • 511 - 516

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus