Correlation of interface chemistry to electrical properties of metal contacts on diamond

Three different metals (Au, Al and Ti) were deposited on polycrystalline diamond films. The effects of post-deposition annealing and pre-deposition Ar+ sputtering were examined. Au and Al did not chemically interact with diamond and formed rectifying contacts on the as-grown surface. The non-reactive interface is an important factor in forming rectifying contacts on diamond. On the contrary, Ti formed a carbide at the interface upon annealing. The resulting contact showed ohmic characteristics. Au was non-reactive even on an Ar+-sputtered diamond surface, while Ti and Al formed carbides on this surface upon annealing at temperatures as low as 430°C. Ti and Al on the sputtered surface resulted in ohmic contacts. Based on these observations, a model of the metal-diamond interface band structure is presented. Combining experimental results with bulk thermodynamic data of carbides has allowed an understanding of the interface chemistry between diamond and various metals. © 1993.

Duke Authors

Cited Authors

  • Tachibana, T; Glass, JT

Published Date

  • 1993

Published In

Volume / Issue

  • 2 / 5-7

Start / End Page

  • 963 - 969

International Standard Serial Number (ISSN)

  • 0925-9635

Citation Source

  • SciVal