Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.
Journal Article (Letter)
A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.
- Palit, S; Kirch, J; Huang, M; Mawst, L; Jokerst, NM
- October 2010
Volume / Issue
- 35 / 20
Start / End Page
- 3474 - 3476
Electronic International Standard Serial Number (EISSN)
International Standard Serial Number (ISSN)
Digital Object Identifier (DOI)