Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

Journal Article (Letter)

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.

Full Text

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Huang, M; Mawst, L; Jokerst, NM

Published Date

  • October 15, 2010

Published In

Volume / Issue

  • 35 / 20

Start / End Page

  • 3474 - 3476

PubMed ID

  • 20967104

Electronic International Standard Serial Number (EISSN)

  • 1539-4794

Language

  • eng

Conference Location

  • United States