Thin-film lasers embedded in passively aligned SU-8 waveguides on SiO 2 /Si
Journal Article
A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. Jth = 260 A/cm2 at λ= 1002.5 nm is achieved for this integrated system. © 2010 Optical Society of America.
Duke Authors
Cited Authors
- Palit, S; Kirch, J; Mawst, L; Jokerst, NM
Published Date
- 2010
Published In
- Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010