Thin-film lasers embedded in passively aligned SU-8 waveguides on SiO 2/Si

Journal Article

A thin film GaAs based edge emitting laser is bonded to silicon, with one facet embedded in a passively aligned polymer waveguide. Jth = 260 A/cm2 at λ= 1002.5 nm is achieved for this integrated system. © 2010 Optical Society of America.

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Mawst, L; Jokerst, NM

Published Date

  • October 11, 2010

Published In

  • Lasers and Electro Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, Cleo/Qels 2010

Citation Source

  • Scopus