Heterogeneous integration of thin-film compound semiconductor lasers and SU8 waveguides on SiO2 /Si

Journal Article

We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ∼997 nm and a threshold current density of 250 A/cm2. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Full Text

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM

Published Date

  • 2010

Published In

Volume / Issue

  • 7607 /

International Standard Serial Number (ISSN)

  • 0277-786X

Digital Object Identifier (DOI)

  • 10.1117/12.842379