Thin film edge emitting lasers integrated onto silicon

Journal Article

The integration of thin film edge emitting lasers onto silicon enables the realization of planar photonic structures for interconnection and for miniaturized optical systems that can be integrated in their entirety at the chip scale. These thin film emitters are compound semiconductor lasers that are optimized for operation without the growth substrate. Removal of the laser growth substrate, coupled with bonding to the silicon host substrate, enable the integration of high quality edge emitting lasers with silicon. This paper explores the challenges, approaches, fabrication processes, and progress in the integration of thin film edge emitting lasers integrated onto silicon. © 2010 Copyright SPIE - The International Society for Optical Engineering.

Full Text

Duke Authors

Cited Authors

  • Jokerst, NM; Palit, S; Kirch, J; Tsvid, G; Mawst, L; Kuech, T

Published Date

  • May 3, 2010

Published In

Volume / Issue

  • 7616 /

International Standard Serial Number (ISSN)

  • 0277-786X

Digital Object Identifier (DOI)

  • 10.1117/12.846414

Citation Source

  • Scopus