Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features.
Journal Article (Journal Article)
A III-V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A/cm(2) for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A/cm(2) for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of approximately 995 nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.
Full Text
Duke Authors
Cited Authors
- Palit, S; Kirch, J; Tsvid, G; Mawst, L; Kuech, T; Jokerst, NM
Published Date
- September 2009
Published In
Volume / Issue
- 34 / 18
Start / End Page
- 2802 - 2804
PubMed ID
- 19756110
Electronic International Standard Serial Number (EISSN)
- 1539-4794
International Standard Serial Number (ISSN)
- 0146-9592
Digital Object Identifier (DOI)
- 10.1364/ol.34.002802
Language
- eng