Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features.

Journal Article

A III-V thin-film single-quantum-well edge-emitting laser is patterned on both sides of the epitaxial layer and bonded to silicon. Injected threshold current densities of 420 A/cm(2) for gain-guided lasers with bottom p-stripes and top n-stripes and 244 A/cm(2) for index-guided bottom p-ridge and top n-stripe lasers are measured with a lasing wavelength of approximately 995 nm. These threshold current densities, among the lowest for thin-film edge-emitting lasers on silicon reported to date (to our knowledge), enable the implementation of integrated applications such as power-efficient portable chip-scale photonic sensing systems.

Full Text

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Tsvid, G; Mawst, L; Kuech, T; Jokerst, NM

Published Date

  • September 15, 2009

Published In

Volume / Issue

  • 34 / 18

Start / End Page

  • 2802 - 2804

PubMed ID

  • 19756110

Electronic International Standard Serial Number (EISSN)

  • 1539-4794

Language

  • eng

Conference Location

  • United States