Thin film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon
Journal Article
A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2. ©2009 Optical Society of America.
Duke Authors
Cited Authors
- Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM
Published Date
- 2009
Published In
- 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009