Thin film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon

Journal Article

A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2. ©2009 Optical Society of America.

Duke Authors

Cited Authors

  • Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM

Published Date

  • November 16, 2009

Published In

  • 2009 Conference on Lasers and Electro Optics and 2009 Conference on Quantum Electronics and Laser Science Conference, Cleo/Qels 2009

Citation Source

  • Scopus