Strain compensated InGaAs/GaAsP single quantum well thin film lasers integrated onto Si substrates

Journal Article

Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation. ©2007 IEEE.

Full Text

Published version (via Digital Object Identifier)

Duke Authors

Jokerst, Nan Marie

Cited Authors

Cho, S-Y; Palit, S; Xu, D; Tsvid, G; Jokerst, N; Mawst, L; Kuech, T

Published Date

2007

Published In

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Start / End Page

829 - 830

International Standard Serial Number (ISSN)

1092-8081

Digital Object Identifier (DOI)

10.1109/LEOS.2007.4382664