Strain compensated InGaAs/GaAsP single quantum well thin film lasers integrated onto Si substrates

Journal Article

Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation. ©2007 IEEE.

Full Text

Duke Authors

Cited Authors

  • Cho, SY; Palit, S; Xu, D; Tsvid, G; Jokerst, N; Mawst, L; Kuech, T

Published Date

  • December 1, 2007

Published In

Start / End Page

  • 829 - 830

International Standard Serial Number (ISSN)

  • 1092-8081

Digital Object Identifier (DOI)

  • 10.1109/LEOS.2007.4382664

Citation Source

  • Scopus