Strain compensated InGaAs/GaAsP single quantum well thin film lasers integrated onto Si substrates
Journal Article
Thin film InGaAs/GaAsP lasers with strained single quantum well active regions have been bonded to Si and tested. The thin film laser structure was designed and grown with no net strain using strain compensation. ©2007 IEEE.
Full Text
Duke Authors
Cited Authors
- Cho, SY; Palit, S; Xu, D; Tsvid, G; Jokerst, N; Mawst, L; Kuech, T
Published Date
- December 1, 2007
Published In
Start / End Page
- 829 - 830
International Standard Serial Number (ISSN)
- 1092-8081
Digital Object Identifier (DOI)
- 10.1109/LEOS.2007.4382664
Citation Source
- Scopus