Embedded photodetectors in polymer waveguides for optical interconnect integrated with a Si-Ge transimpedance amplifier circuit operating at 2.5 Gbit/s
The embedded photodetectors in polymer waveguides for optical interconnect, integrated with a Silicon Germanium transimpedance amplifier circuit, operating at 2.5 Gbit per seconds is discussed. A 3 micrometre thick benzocyclobutane polymer waveguide is spun on to the substrate and patterned to embed the photodetector in the bottom of the waveguide core. The center of the optical waveguide was aligned to the photodetector, for the direct coupling of the waveguided optical signals, to the embedded photodetector. The result shows that the dark current was less then 30 nano ampere and the photocurrent saturates at around 320 micro ampere, at a 1.2 V DC bias voltage.
Shin, J; Seo, S-W; Cho, S-Y; Kim, JH; Brook, M; Jokerst, NM
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