InP HBT on Si substrates with integral passive components: A wafer scale package

Journal Article

An InP-based HBT is integrated to a Si substrate insulated with BCB by removing the InP substrate and bonding the active device layers. The DC and RF characteristics show minimal degradation after bonding to the Si. Transmission line structures are fabricated and measured on both bare Si and Si coated with BCB. Insertion loss of the CPW lines demonstrate useful high frequency propagation with BCB on the lossy substrate. Utilizing these results, an amplifier is designed to demonstrate InP thin-film integrated high frequency circuits on silicon. These results point to the development of wafer scale packaged high frequency electronics.

Duke Authors

Cited Authors

  • Chun, C; Evers, N; Laskar, J; Jokerst, NM; Chau, H-F; III, EB

Published Date

  • 1997

Published In

  • IEEE MTT-S International Microwave Symposium Digest

Volume / Issue

  • 2 /

Start / End Page

  • 513 - 516