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Thin film multi-material OEICs

Publication ,  Journal Article
Jokerst, NM
Published in: IEEE LEOS Annual Meeting - Proceedings
December 1, 1994

A promising method for integrating semiconductor devices, both electronic and optoelectronic, with arbitrary host substrates such as integrated circuits, polymers, and glass, is thin film device integration. Single crystal, thin film semiconductor devices can be separated from the growth substrate and bonded to host substrates using standard microelectronic processing, which is an attractive option for multi-material integrated optoelectronics. The epitaxial lift off (ELO) of Si, GaAs, and InP-based thin films and the bonding of these thin film devices to host substrates has been demonstrated and is reviewed here. In addition, thin film device performance before and after separation from the growth substrate is examined.

Duke Scholars

Published In

IEEE LEOS Annual Meeting - Proceedings

Publication Date

December 1, 1994

Volume

1

Start / End Page

69 / 70
 

Citation

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ICMJE
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Jokerst, N. M. (1994). Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings, 1, 69–70.
Jokerst, N. M. “Thin film multi-material OEICs.” IEEE LEOS Annual Meeting - Proceedings 1 (December 1, 1994): 69–70.
Jokerst NM. Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings. 1994 Dec 1;1:69–70.
Jokerst, N. M. “Thin film multi-material OEICs.” IEEE LEOS Annual Meeting - Proceedings, vol. 1, Dec. 1994, pp. 69–70.
Jokerst NM. Thin film multi-material OEICs. IEEE LEOS Annual Meeting - Proceedings. 1994 Dec 1;1:69–70.

Published In

IEEE LEOS Annual Meeting - Proceedings

Publication Date

December 1, 1994

Volume

1

Start / End Page

69 / 70