Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons

Journal Article

We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors.

Duke Authors

Cited Authors

  • Calhoun, KH; Jokerst, NM

Published Date

  • December 1, 1993

Published In

  • Conference Proceedings Lasers and Electro Optics Society Annual Meeting

Start / End Page

  • 339 - 340

Citation Source

  • Scopus