Determination of Franz-Keldysh electrorefraction near the GaAs absorption edge using epitaxial liftoff thin film semiconductor etalons
Journal Article
We report the first direct measurement of near-band edge (within several meV) Franz-Keldysh electrorefraction in GaAs using thin film, P-i-N double heterostructures and MSM structures fabricated using epitaxial liftoff processing. Thin metallic films are applied to the top and bottom surfaces of the devices and are used as both electrical contacts and mirrors.
Duke Authors
Cited Authors
- Calhoun, KH; Jokerst, NM
Published Date
- December 1, 1993
Published In
- Conference Proceedings Lasers and Electro Optics Society Annual Meeting
Start / End Page
- 339 - 340
Citation Source
- Scopus