Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.

Published

Journal Article

The use of carbon nanotube (CNT)-based field-effect transistors (FETs) as pass transistors is investigated. Logic gates are designed and constructed with these CNT FETs in the pass-transistor logic (PTL) style. Because two of the three terminals of every CNT FET are used as inputs, the efficiency per transistor in PTL circuits is significantly improved. With the PTL style, a single pair of FETS, one n-type and one p-type, is sufficient to construct high-performance AND or OR gates in which the measured output voltages are consistent with those quantitatively derived using the characteristics of the pair of the constituent n- and p-FETs. A one-bit full subtractor, which requires a total of 28 FETs to construct in the usual CMOS circuit, is realized on individual CNTs for the first time using the PTL style with only three pairs of n- and p-FETs.

Full Text

Duke Authors

Cited Authors

  • Ding, L; Zhang, Z; Pei, T; Liang, S; Wang, S; Zhou, W; Liu, J; Peng, L-M

Published Date

  • May 2012

Published In

Volume / Issue

  • 6 / 5

Start / End Page

  • 4013 - 4019

PubMed ID

  • 22482426

Pubmed Central ID

  • 22482426

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

International Standard Serial Number (ISSN)

  • 1936-0851

Digital Object Identifier (DOI)

  • 10.1021/nn300320j

Language

  • eng