CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Published

Journal Article

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

Full Text

Duke Authors

Cited Authors

  • Ding, L; Zhang, Z; Liang, S; Pei, T; Wang, S; Li, Y; Zhou, W; Liu, J; Peng, L-M

Published Date

  • January 2012

Published In

Volume / Issue

  • 3 /

Start / End Page

  • 677 -

PubMed ID

  • 22334080

Pubmed Central ID

  • 22334080

Electronic International Standard Serial Number (EISSN)

  • 2041-1723

International Standard Serial Number (ISSN)

  • 2041-1723

Digital Object Identifier (DOI)

  • 10.1038/ncomms1682

Language

  • eng