Mobile ambipolar domain in carbon-nanotube infrared emitters.

Published

Journal Article

We spatially resolve the infrared light emission from ambipolar carbon-nanotube field-effect transistors with long-channel lengths. Electrons and holes are injected from opposite contacts into a single nanotube molecule. The ambipolar domain, where electron and hole currents overlap, forms a microscopic light emitter within the carbon nanotube. We can control its location by varying gate and drain voltages. At high electric fields, additional stationary spots appear due to defect-assisted Zener tunneling or impact ionization. The laterally resolved measurement provides valuable insight into the transistor behavior, complementary to electronic device characteristics.

Full Text

Duke Authors

Cited Authors

  • Freitag, M; Chen, J; Tersoff, J; Tsang, JC; Fu, Q; Liu, J; Avouris, P

Published Date

  • August 11, 2004

Published In

Volume / Issue

  • 93 / 7

Start / End Page

  • 076803 -

PubMed ID

  • 15324264

Pubmed Central ID

  • 15324264

Electronic International Standard Serial Number (EISSN)

  • 1079-7114

International Standard Serial Number (ISSN)

  • 0031-9007

Digital Object Identifier (DOI)

  • 10.1103/physrevlett.93.076803

Language

  • eng