Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling

Journal Article

This paper introduces a method for the determination of the gate oxide thickness, Xox, of N- and P-Channel MOSFETs with ultrathin oxides based on the characterization and modeling of the substrate current resulting from valence-band electron tunneling (VBET) in the direct-tunneling (DT) regime. Under certain bias conditions, valence-band electron tunneling becomes the main constituent of the substrate currents in N- and P-MOSFETs. This method has several advantages over other methods for the determination of Xox, and yields values of Xox that agree well with those obtained from modeling capacitance-voltage characteristics, C(V), while taking quantum-mechanical effects into account. Its main advantage is that it is not limited by the oxide thickness.

Duke Authors

Cited Authors

  • Shanware, A; Shiely, JP; Massoud, HZ; Vogel, E; Henson, K; Srivastava, A; Osburn, C; Hauser, JR; Wortman, JJ

Published Date

  • December 1, 1999

Published In

Start / End Page

  • 815 - 818

International Standard Serial Number (ISSN)

  • 0163-1918

Citation Source

  • Scopus