Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Publication
, Journal Article
Zhao, ZY; Zhang, WM; Yi, C; Stiff-Roberts, AD; Rodriguez, BJ; Baddorf, AP
Published in: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
December 1, 2007
Cross-section of multi-layer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscopy to investigate dopant incorporation into quantum dots. Simulation of the corresponding band structure is used to better understand the experimental results. ©2007 IEEE.
Duke Scholars
Published In
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
DOI
ISSN
1092-8081
Publication Date
December 1, 2007
Start / End Page
32 / 33
Citation
APA
Chicago
ICMJE
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Zhao, Z. Y., Zhang, W. M., Yi, C., Stiff-Roberts, A. D., Rodriguez, B. J., & Baddorf, A. P. (2007). Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 32–33. https://doi.org/10.1109/LEOS.2007.4382260
Zhao, Z. Y., W. M. Zhang, C. Yi, A. D. Stiff-Roberts, B. J. Rodriguez, and A. P. Baddorf. “Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy.” Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, December 1, 2007, 32–33. https://doi.org/10.1109/LEOS.2007.4382260.
Zhao ZY, Zhang WM, Yi C, Stiff-Roberts AD, Rodriguez BJ, Baddorf AP. Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2007 Dec 1;32–3.
Zhao, Z. Y., et al. “Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy.” Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Dec. 2007, pp. 32–33. Scopus, doi:10.1109/LEOS.2007.4382260.
Zhao ZY, Zhang WM, Yi C, Stiff-Roberts AD, Rodriguez BJ, Baddorf AP. Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2007 Dec 1;32–33.
Published In
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
DOI
ISSN
1092-8081
Publication Date
December 1, 2007
Start / End Page
32 / 33