Recent progresses in understanding gettering in silicon


Journal Article

For IC fabrications using CZ Si, intrinsic gettering utilizing oxygen precipitation has been extensively studied in the past, with the main efforts concentrated on the engineering and scientific aspects of the creation of gettering sites. The present review, however, will focus on recent progresses on the modeling of processes and mechanisms of the gettering of metallic impurities from the device active regions to the created gettering regions, together with the electrical activity of impurity precipitates.

Duke Authors

Cited Authors

  • Tan, TY

Published Date

  • January 1, 2002

Published In

Volume / Issue

  • 719 /

Start / End Page

  • 89 - 100

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus