Modeling growth directional features of silicon nanowires obtained using SiO

Growth directional features of silicon nanowires (SiNW) obtained using silica (SiO) were discussed. Nanowires were produced through vapor-liquid-solid (VLS) reactions, oxide assisted methods using unstable semiconductor-oxide source materials either by thermal evaporation or by laser ablation. The growth directional features of these nanowires were also documented.

Duke Authors

Cited Authors

  • Tan, TY; Lee, ST; Gösele, U

Published Date

  • 2002

Published In

  • Materials Research Society Symposium - Proceedings

Volume / Issue

  • 719 /

Start / End Page

  • 235 - 240

Citation Source

  • SciVal