Modeling growth directional features of silicon nanowires obtained using SiO

Published

Journal Article

Growth directional features of silicon nanowires (SiNW) obtained using silica (SiO) were discussed. Nanowires were produced through vapor-liquid-solid (VLS) reactions, oxide assisted methods using unstable semiconductor-oxide source materials either by thermal evaporation or by laser ablation. The growth directional features of these nanowires were also documented.

Duke Authors

Cited Authors

  • Tan, TY; Lee, ST; Gösele, U

Published Date

  • January 1, 2002

Published In

Volume / Issue

  • 719 /

Start / End Page

  • 235 - 240

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus