Fermi-level effect and junction carrier concentration effect on boron distribution in Ge^Si^/Si heterostructures


Journal Article

Dopant segregation mechanism in general involves the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations. Satisfactory fits of available B distribution profiles in GexSij.x/Si heterostructures have been obtained using such a model, but with the chemical effect not important. The Fermi-level effect determines the difference in the ionized B solubilities in GexSii_x and Si. The singly-positively charged crystal self-interstitials I+ governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction. © 1999 Materials Research Society.

Duke Authors

Cited Authors

  • Chen, CHO; Gösele, UM; Tan, TY

Published Date

  • December 1, 1999

Published In

Volume / Issue

  • 535 /

Start / End Page

  • 275 - 280

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus