Comparison of gettering in single- and multicrystalline silicon for solar cells


Journal Article

The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.

Duke Authors

Cited Authors

  • Sopori, BL; Jastrzebski, L; Tan, T

Published Date

  • December 1, 1996

Published In

Start / End Page

  • 625 - 628

International Standard Serial Number (ISSN)

  • 0160-8371

Citation Source

  • Scopus