Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering
Publication
, Journal Article
Joshi, SM; Goesele, UM; Tan, TY
Published in: Materials Research Society Symposium - Proceedings
January 1, 1995
Gettering is widely used for fabricating integrated circuits using Si substrates, and has great potential for solar cell fabrications as well. Recently available solar cell efficiency studies have shown the benefits of the wafer backside Al, attributable to effects of gettering, a wafer backside field, and passivation of grain boundaries and dislocations. In this paper, we report experimental results which showed unambiguously that Czochralski Si wafer bulk minority carrier diffusion lengths can be significantly improved due to gettering of impurities by wafer backside Al, which also provided a protection from environmental contamination.
Duke Scholars
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 1995
Volume
378
Start / End Page
279 / 284
Citation
APA
Chicago
ICMJE
MLA
NLM
Joshi, S. M., Goesele, U. M., & Tan, T. Y. (1995). Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering. Materials Research Society Symposium - Proceedings, 378, 279–284. https://doi.org/10.1557/proc-378-279
Joshi, S. M., U. M. Goesele, and T. Y. Tan. “Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering.” Materials Research Society Symposium - Proceedings 378 (January 1, 1995): 279–84. https://doi.org/10.1557/proc-378-279.
Joshi SM, Goesele UM, Tan TY. Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering. Materials Research Society Symposium - Proceedings. 1995 Jan 1;378:279–84.
Joshi, S. M., et al. “Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering.” Materials Research Society Symposium - Proceedings, vol. 378, Jan. 1995, pp. 279–84. Scopus, doi:10.1557/proc-378-279.
Joshi SM, Goesele UM, Tan TY. Minority carrier diffusion length improvement in Czochralski silicon by aluminum gettering. Materials Research Society Symposium - Proceedings. 1995 Jan 1;378:279–284.
Published In
Materials Research Society Symposium - Proceedings
DOI
ISSN
0272-9172
Publication Date
January 1, 1995
Volume
378
Start / End Page
279 / 284