Wafer bonding of Si with dissimilar materials


Journal Article

Wafer bonding provides a high degree of flexibility in material integration. However, the major concerns of Si wafer bonding with dissimilar materials are their thermal mismatch and the bubble generation during the annealing process. In this article, a low temperature bonding approach is described and implemented to realize bulk quality ultrathin SOI by an ion-implanted etch stop, single crystal ultrathin Si on quartz or on glass and Si/ZnS.

Duke Authors

Cited Authors

  • Tong, QY; Kidao, G; Tan, TY; Gosele, U

Published Date

  • December 1, 1995

Published In

  • International Conference on Solid State and Integrated Circuit Technology Proceedings

Start / End Page

  • 524 - 526

Citation Source

  • Scopus