Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n-type GaAs


Journal Article

We have calculated the thermal equilibrium concentrations of the various negatively charged Ga vacancy species in GaAs. The triply-negatively-charged Ga vacancy, VGa3-, has been emphasized, since it dominates Ga self-diffusion and Ga-Al interdiffusion under intrinsic and n-doping conditions, as well as the diffusion of Si donor atoms occupying Ga sites. Under strong n-doping conditions, the thermal equilibrium VGa3-concentration, {Mathematical expression}, has been found to exhibit a temperature independence or a negative temperature dependence, i.e., the {Mathematical expression} value is either unchanged or increases as the temperature is lowered. This is quite contrary to the normal point defect behavior for which the point defect thermal equilibrium concentration decreases as the temperature is lowered. This {Mathematical expression} property provides explanations to a number of outstanding experimental results, either requiring the interpretation that VGa3-has attained its thermal equilibrium concentration at the onset of each experiment, or requiring mechanisms involving point defect non-equilibrium phenomena. © 1993 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; You, HM; Gösele, UM

Published Date

  • March 1, 1993

Published In

Volume / Issue

  • 56 / 3

Start / End Page

  • 249 - 258

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0947-8396

Digital Object Identifier (DOI)

  • 10.1007/BF00539483

Citation Source

  • Scopus