Point defects, diffusion processes, and swirl defect formation in silicon

Published

Journal Article

The paper consists of three parts. In the first part we review the basic experimental and theoretical results which shaped our present knowledge on point defects and diffusion processes in silicon. These results concern on one side oxidation effects which established that silicon self-interstitials and vacancies coexist in silicon and on the other side diffusion of gold into dislocation-free silicon which allowed to determine the self-interstitial contribution to silicon self-diffusion and to estimate the corresponding vacancy contribution. In the second part we discuss topics for which an understanding is just emerging within the framework of coexisting self-interstitials and vacancies: reaching of local dynamical equilibrium between self-interstitials and vacancies; rough estimates of the thermal equilibrium concentrations of self-interstitials and vacancies and their respective diffusivities, and finally, various possibilities to generate an undersaturation of self-interstitials. In the third part we examine swirl defect formation in silicon in terms of vacancies and self-interstitials. © 1985 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gösele, U

Published Date

  • May 1, 1985

Published In

Volume / Issue

  • 37 / 1

Start / End Page

  • 1 - 17

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0721-7250

Digital Object Identifier (DOI)

  • 10.1007/BF00617863

Citation Source

  • Scopus