INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second part, we discuss the influence of point defects on the diffusion and percipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO//2 precipitates.

Duke Authors

Cited Authors

  • Goesele, U; Tan, TY

Published Date

  • 1985

Published In

  • Materials Research Society Symposia Proceedings

Volume / Issue

  • 36 /

Start / End Page

  • 105 - 116

Citation Source

  • SciVal