INFLUENCE OF POINT DEFECTS ON DIFFUSION AND GETTERING IN SILICON.

Published

Journal Article

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second part, we discuss the influence of point defects on the diffusion and percipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO//2 precipitates.

Duke Authors

Cited Authors

  • Goesele, U; Tan, TY

Published Date

  • December 1, 1985

Published In

Volume / Issue

  • 36 /

Start / End Page

  • 105 - 116

International Standard Serial Number (ISSN)

  • 0272-9172

Citation Source

  • Scopus