On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon


Journal Article

An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures. © 1983 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Tan, TY; Gösele, U; Morehead, FF

Published Date

  • June 1, 1983

Published In

Volume / Issue

  • 31 / 2

Start / End Page

  • 97 - 108

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0721-7250

Digital Object Identifier (DOI)

  • 10.1007/BF00616312

Citation Source

  • Scopus