ON THE NATURE OF POINT DEFECTS AND THE EFFECT OF OXIDATION ON SUBSTITUTIONAL DOPANT DIFFUSION IN SILICON.

An extensive analysis of the substitutional dopant diffusion phenomena in silicon during oxidation is presented. The analysis covers qualitative as well as quantitative aspects of the oxidation-enhanced and -retarded diffusion (OED and ORD) phenomena, and examines three different possible assumptions that can be made on the nature of the silicon thermal equilibrium point defect species: silicon self-interstitials (I) only, vacancies (V) only, coexistence of I and V. The only consistent way to interpret all properly documented OED/ORD data is to assume that I and V coexist under oxidation as well as under thermal equilibrium conditions at high temperatures.

Duke Authors

Cited Authors

  • Tan, TY; Gosele, U; Morehead, FF

Published Date

  • 1983

Published In

  • Applied Physics A: Solids and Surfaces

Volume / Issue

  • A 31 / 2

Start / End Page

  • 97 - 108

Citation Source

  • SciVal