Oxygen diffusion and thermal donor formation in silicon


Journal Article

The information available on the diffusion of oxygen and on the formation of thermal donors in silicon is critically reviewed. In this context the effects of intrinsic point defects on the diffusion-controlled growth of oxygen precipitates is investigated in some detail. Seemingly contradictory experimental results on the diffusivity of oxygen in silicon at temperatures around 400° C are explained in terms of fast-diffusing gas-like molecular oxygen in silicon. The concept of molecular oxygen is also invoked in a newly suggested model of thermal donor formation in silicon. The diffusivity of molecular oxygen in silicon is estimated to be around 10-9cm2s-1 at 450° C, almost nine orders of magnitude higher than the diffusivity of atomic oxygen in interstitial position. © 1982 Springer-Verlag.

Full Text

Duke Authors

Cited Authors

  • Gösele, U; Tan, TY

Published Date

  • June 1, 1982

Published In

Volume / Issue

  • 28 / 2

Start / End Page

  • 79 - 92

Electronic International Standard Serial Number (EISSN)

  • 1432-0630

International Standard Serial Number (ISSN)

  • 0721-7250

Digital Object Identifier (DOI)

  • 10.1007/BF00617135

Citation Source

  • Scopus