Ion-induced defects in semiconductors
Publication
, Journal Article
Corbett, JW; Karins, JP; Tan, TY
Published in: Nuclear Instruments and Methods
1981
The status of our knowledge of ion-induced defects in semiconductors will be reviewed, including the charge-state dependence of defects, novel defect migration mechanism and enhanced damage production mechanisms. The main emphasis will be on defects in silicon where a panorama of defects is emerging which encompasses the evolution of damage from vacancies and interstitials and their aggregates to stacking faults and dislocations to disordered zones and the development of an amorphous layer. © 1981.
Duke Scholars
Published In
Nuclear Instruments and Methods
ISSN
0029-554X
Publication Date
1981
Volume
182-183
Issue
PART 1
Start / End Page
457 / 476
Citation
APA
Chicago
ICMJE
MLA
NLM
Corbett, J. W., Karins, J. P., & Tan, T. Y. (1981). Ion-induced defects in semiconductors. Nuclear Instruments and Methods, 182–183(PART 1), 457–476.
Corbett, J. W., J. P. Karins, and T. Y. Tan. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods 182–183, no. PART 1 (1981): 457–76.
Corbett JW, Karins JP, Tan TY. Ion-induced defects in semiconductors. Nuclear Instruments and Methods. 1981;182–183(PART 1):457–76.
Corbett, J. W., et al. “Ion-induced defects in semiconductors.” Nuclear Instruments and Methods, vol. 182–183, no. PART 1, 1981, pp. 457–76.
Corbett JW, Karins JP, Tan TY. Ion-induced defects in semiconductors. Nuclear Instruments and Methods. 1981;182–183(PART 1):457–476.
Published In
Nuclear Instruments and Methods
ISSN
0029-554X
Publication Date
1981
Volume
182-183
Issue
PART 1
Start / End Page
457 / 476