Ion-induced defects in semiconductors

Journal Article

The status of our knowledge of ion-induced defects in semiconductors will be reviewed, including the charge-state dependence of defects, novel defect migration mechanism and enhanced damage production mechanisms. The main emphasis will be on defects in silicon where a panorama of defects is emerging which encompasses the evolution of damage from vacancies and interstitials and their aggregates to stacking faults and dislocations to disordered zones and the development of an amorphous layer. © 1981.

Duke Authors

Cited Authors

  • Corbett, JW; Karins, JP; Tan, TY

Published Date

  • 1981

Published In

Volume / Issue

  • 182-183 / PART 1

Start / End Page

  • 457 - 476

International Standard Serial Number (ISSN)

  • 0029-554X