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DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY.

Publication ,  Journal Article
Krakow, W; Tan, TY; Foell, H
Published in: Mat Res Soc Symp Proc
December 1, 1981

Duke Scholars

Teh Yu Tan
Author Teh Yu Tan Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

Mat Res Soc Symp Proc

Publication Date

December 1, 1981

Start / End Page

185 / 190
 

Citation

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Krakow, W., Tan, T. Y., & Foell, H. (1981). DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY. Mat Res Soc Symp Proc, 185–190.
Krakow, W., T. Y. Tan, and H. Foell. “DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY.” Mat Res Soc Symp Proc, December 1, 1981, 185–90.
Krakow W, Tan TY, Foell H. DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY. Mat Res Soc Symp Proc. 1981 Dec 1;185–90.
Krakow, W., et al. “DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY.” Mat Res Soc Symp Proc, Dec. 1981, pp. 185–90.
Krakow W, Tan TY, Foell H. DETECTION OF POINT DEFECT CHAINS IN ION IRRADIATED SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY. Mat Res Soc Symp Proc. 1981 Dec 1;185–190.

Published In

Mat Res Soc Symp Proc

Publication Date

December 1, 1981

Start / End Page

185 / 190