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Relocation dynamics of domain boundaries in semiconductor superlattices

Publication ,  Journal Article
Rogozia, M; Teitsworth, SW; Grahn, HT; Ploog, KH
Published in: Physical Review B - Condensed Matter and Materials Physics
January 1, 2002

The formation of static electric-field domains in doped semiconductor superlattices appears in the current-voltage (formula presented) characteristics as multiple current branches separated by abrupt discontinuities. The switching dynamics of the charge-accumulation layer forming the domain boundary is experimentally investigated at dc voltages in the first plateau of the (formula presented) characteristic for different polarities and amplitudes of the applied voltage steps. When the voltage is decreased (down jumps) from its initial dc value, the accumulation layer can directly move from its initial position to its final position, in accordance with the direction of the applied voltage step. However, when the voltage is increased (up jumps), there are two different modes of the relocation motion of the accumulation layer. For small up jumps, the accumulation layer can still move directly from its initial to its final position. When the amplitude of the transient current peak is above a critical value, a charge dipole is injected at the emitter contact, in addition to the existing monopole formed by the domain boundary. The experimentally observed switching behavior is in excellent qualitative agreement with recent theoretical work [A. Amann et al., Phys. Rev. E 63, 066207 (2001)]. © 2002 The American Physical Society.

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Published In

Physical Review B - Condensed Matter and Materials Physics

DOI

EISSN

1550-235X

ISSN

1098-0121

Publication Date

January 1, 2002

Volume

65

Issue

20

Start / End Page

1 / 7

Related Subject Headings

  • Fluids & Plasmas
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

Citation

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Rogozia, M., Teitsworth, S. W., Grahn, H. T., & Ploog, K. H. (2002). Relocation dynamics of domain boundaries in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics, 65(20), 1–7. https://doi.org/10.1103/PhysRevB.65.205303
Rogozia, M., S. W. Teitsworth, H. T. Grahn, and K. H. Ploog. “Relocation dynamics of domain boundaries in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics 65, no. 20 (January 1, 2002): 1–7. https://doi.org/10.1103/PhysRevB.65.205303.
Rogozia M, Teitsworth SW, Grahn HT, Ploog KH. Relocation dynamics of domain boundaries in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2002 Jan 1;65(20):1–7.
Rogozia, M., et al. “Relocation dynamics of domain boundaries in semiconductor superlattices.” Physical Review B - Condensed Matter and Materials Physics, vol. 65, no. 20, Jan. 2002, pp. 1–7. Scopus, doi:10.1103/PhysRevB.65.205303.
Rogozia M, Teitsworth SW, Grahn HT, Ploog KH. Relocation dynamics of domain boundaries in semiconductor superlattices. Physical Review B - Condensed Matter and Materials Physics. 2002 Jan 1;65(20):1–7.

Published In

Physical Review B - Condensed Matter and Materials Physics

DOI

EISSN

1550-235X

ISSN

1098-0121

Publication Date

January 1, 2002

Volume

65

Issue

20

Start / End Page

1 / 7

Related Subject Headings

  • Fluids & Plasmas
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences