Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

Published

Journal Article

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current-voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers on n+-GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.

Full Text

Duke Authors

Cited Authors

  • Olafsen, LJ; Daniels-Race, T; Kendall, RE; Teitsworth, SW

Published Date

  • January 1, 2000

Published In

Volume / Issue

  • 27 / 1

Start / End Page

  • 7 - 14

International Standard Serial Number (ISSN)

  • 0749-6036

Digital Object Identifier (DOI)

  • 10.1006/spmi.1999.0811

Citation Source

  • Scopus