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Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias

Publication ,  Journal Article
Olafsen, LJ; Daniels-Race, T; Kendall, RE; Teitsworth, SW
Published in: Superlattices and Microstructures
January 1, 2000

GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current-voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers on n+-GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.

Duke Scholars

Published In

Superlattices and Microstructures

DOI

ISSN

0749-6036

Publication Date

January 1, 2000

Volume

27

Issue

1

Start / End Page

7 / 14

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 0206 Quantum Physics
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics
 

Citation

APA
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ICMJE
MLA
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Olafsen, L. J., Daniels-Race, T., Kendall, R. E., & Teitsworth, S. W. (2000). Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures, 27(1), 7–14. https://doi.org/10.1006/spmi.1999.0811
Olafsen, L. J., T. Daniels-Race, R. E. Kendall, and S. W. Teitsworth. “Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias.” Superlattices and Microstructures 27, no. 1 (January 1, 2000): 7–14. https://doi.org/10.1006/spmi.1999.0811.
Olafsen LJ, Daniels-Race T, Kendall RE, Teitsworth SW. Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures. 2000 Jan 1;27(1):7–14.
Olafsen, L. J., et al. “Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias.” Superlattices and Microstructures, vol. 27, no. 1, Jan. 2000, pp. 7–14. Scopus, doi:10.1006/spmi.1999.0811.
Olafsen LJ, Daniels-Race T, Kendall RE, Teitsworth SW. Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias. Superlattices and Microstructures. 2000 Jan 1;27(1):7–14.
Journal cover image

Published In

Superlattices and Microstructures

DOI

ISSN

0749-6036

Publication Date

January 1, 2000

Volume

27

Issue

1

Start / End Page

7 / 14

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 0206 Quantum Physics
  • 0205 Optical Physics
  • 0204 Condensed Matter Physics