Photoluminescence of n-i-n GaAs/AlAs single quantum well structures under electric field bias
Published
Journal Article
GaAs/AlAs single quantum well structures designed with well thickness near the type-I/type-II crossover show distinctive photoluminescence peaks corresponding to both type-I and type-II recombinations. Photoluminescence measurements as a function of applied electric field and temperature ranging from 23 to 180 K and current-voltage measurements are presented for two MBE-grown structures clad with Si-doped Al0.45Ga0.55As layers on n+-GaAs [100] substrates. The large and field-dependent energy separation between type-I and type-II luminescence peaks is understood to arise from the build-up of electrons at the X point in the AlAs barrier.
Full Text
Duke Authors
Cited Authors
- Olafsen, LJ; Daniels-Race, T; Kendall, RE; Teitsworth, SW
Published Date
- January 1, 2000
Published In
Volume / Issue
- 27 / 1
Start / End Page
- 7 - 14
International Standard Serial Number (ISSN)
- 0749-6036
Digital Object Identifier (DOI)
- 10.1006/spmi.1999.0811
Citation Source
- Scopus