Statistics of the domain-boundary relocation time in semiconductor superlattices

Journal Article (Journal Article)

Static domain formation in doped semiconductor superlattices results in several current branches separated by abrupt discontinuities that exhibit hysteresis. The transition from one branch to its adjacent one is studied by time-resolved switching experiments. The mean value of the relocation time increases by more than one order of magnitude, when the final voltage on the adjacent branch is reduced to a value approaching the discontinuity. At the same time, the distribution function of the relocation time changes from a simple Gaussian to a first-passage time form. © 2001 The American Physical Society.

Full Text

Duke Authors

Cited Authors

  • Teitsworth, SW; Rogozia, M; Grahn, HT; Ploog, KH

Published Date

  • January 1, 2001

Published In

Volume / Issue

  • 64 / 4

Electronic International Standard Serial Number (EISSN)

  • 1550-235X

International Standard Serial Number (ISSN)

  • 1098-0121

Digital Object Identifier (DOI)

  • 10.1103/PhysRevB.64.041308

Citation Source

  • Scopus