Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures

Published

Journal Article

We have measured current-voltage characteristics at liquid-helium temperature and for magnetic fields up to 7T(parallel to the current flow) for three similar asymmetric GaAs/AlAs double-barrier structures, all of which possess large phonon-assisted tunnelling currents. Confined longitudinal optical (LO) phonons in the GaAs well layer and LO-like symmetric interface phonons treated within a dielectric continuum picture suffice to account for the measured currents. Phonon-assisted tunnelling current levels as well as magnetotunnelling data are found to depend sensitively on well and barrier widths.

Full Text

Duke Authors

Cited Authors

  • Teitsworth, SW; Turley, PJ; Wallis, CR; Li, W; Bhattacharya, PK

Published Date

  • December 1, 1994

Published In

Volume / Issue

  • 9 / 5 S

Start / End Page

  • 508 - 511

International Standard Serial Number (ISSN)

  • 0268-1242

Digital Object Identifier (DOI)

  • 10.1088/0268-1242/9/5S/029

Citation Source

  • Scopus