Magnetotunnelling measurements of localized optical phonons in GaAs/AlAs double-barrier structures
Journal Article (Journal Article)
We have measured current-voltage characteristics at liquid-helium temperature and for magnetic fields up to 7T(parallel to the current flow) for three similar asymmetric GaAs/AlAs double-barrier structures, all of which possess large phonon-assisted tunnelling currents. Confined longitudinal optical (LO) phonons in the GaAs well layer and LO-like symmetric interface phonons treated within a dielectric continuum picture suffice to account for the measured currents. Phonon-assisted tunnelling current levels as well as magnetotunnelling data are found to depend sensitively on well and barrier widths.
Full Text
Duke Authors
Cited Authors
- Teitsworth, SW; Turley, PJ; Wallis, CR; Li, W; Bhattacharya, PK
Published Date
- December 1, 1994
Published In
Volume / Issue
- 9 / 5 S
Start / End Page
- 508 - 511
International Standard Serial Number (ISSN)
- 0268-1242
Digital Object Identifier (DOI)
- 10.1088/0268-1242/9/5S/029
Citation Source
- Scopus