Comparison of the electrical properties of simultaneously deposited homoepitaxial and polycrystalline diamond films

Published

Journal Article (Review)

The electrical transport properties of simultaneously deposited, B-doped homoepitaxial and polycrystalline diamond thin films have been evaluated by Hall-effect and resistivity measurements over a temperature range of 80-600 K. The same films were later characterized by scanning electron microscopy, secondary-ion-mass spectroscopy, and an oxidation defect etch. The study involved four sets of chemical-vapor-deposited diamond films with individual B concentrations ranging from 1.5×1017 to 1.5×10 20 cm-3. In each of the four cases the mobility of the polycrystalline film was lower than that of the homoepitaxial film by 1-2 orders of magnitude over the entire temperature range. Polycrystalline films also incorporated 2-4 times more B, had 3-5 times higher compensation ratios, and displayed activation energies that were 0.05-0.09 eV lower than in the homoepitaxial films. Hopping conduction was observed in both types of films at low temperatures, but was enhanced in polycrystalline films as evident by higher transition temperatures. Preliminary efforts have been made to evaluate these results by considering the possible effects of crystal structure, compensation, impurity segregation, grain-boundary trapping, and impurity conduction. © 1995 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Malta, DM; Von Windheim, JA; Wynands, HA; Fox, BA

Published Date

  • December 1, 1995

Published In

Volume / Issue

  • 77 / 4

Start / End Page

  • 1536 - 1545

International Standard Serial Number (ISSN)

  • 0021-8979

Digital Object Identifier (DOI)

  • 10.1063/1.358905

Citation Source

  • Scopus