Application of ion-assited electron beam metallization to diamond electronics

Published

Journal Article

The application of the ion-assisted electron beam deposition technique for the fabrication of contacts on diamond has been evaluated by studying the adhesion of metal films as well as by performing electrical measurements on metal/diamond structures. Metal films were deposited on naturally occuring B-doped diamond crystals (type IIb) and on polycrystalline diamond films using an electron beam deposition technique with and without ion assist. A marked improvement in adhesion was observed for the films deposited with ion-assisted deposition compared to those deposited by non-ion-assisted electron beam technique. The metal contacts fabricated on a natural diamond (type IIb) exhibited excellent rectifying characteristics with low reverse leakage current densities. No apparent difference in the reverse leakage current densities could be detected for the contacts deposited by ion-assisted electron beam deposition as compared to the contacts deposited by non-ion-assisted electron beam. © 1994.

Full Text

Duke Authors

Cited Authors

  • Maynard, L; Venkatesan, V; von Windheim, JA; Thompson, DG

Published Date

  • January 15, 1994

Published In

Volume / Issue

  • 238 / 1

Start / End Page

  • 37 - 43

International Standard Serial Number (ISSN)

  • 0040-6090

Digital Object Identifier (DOI)

  • 10.1016/0040-6090(94)90645-9

Citation Source

  • Scopus