Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond

Journal Article

Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals have been investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a space-charge-limited current conduction that is influenced by the presence of deep-level states. A simple analysis of these characteristics has been used to identify various deep-level states in the energy range 0.5-0.8 eV above the valence band.

Full Text

Duke Authors

Cited Authors

  • Venkatesan, V; Windheim, JAV; Das, K

Published Date

  • 1993

Published In

  • Ieee Transactions on Electron Devices

Volume / Issue

  • 40 / 8

Start / End Page

  • 1556 - 1558

Digital Object Identifier (DOI)

  • 10.1109/16.223722