Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond
Publication
, Journal Article
Venkatesan, V; Windheim, JAV; Das, K
Published in: IEEE Transactions on Electron Devices
1993
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals have been investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a space-charge-limited current conduction that is influenced by the presence of deep-level states. A simple analysis of these characteristics has been used to identify various deep-level states in the energy range 0.5-0.8 eV above the valence band.
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
Publication Date
1993
Volume
40
Issue
8
Start / End Page
1556 / 1558
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Venkatesan, V., Windheim, J. A. V., & Das, K. (1993). Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond. IEEE Transactions on Electron Devices, 40(8), 1556–1558. https://doi.org/10.1109/16.223722
Venkatesan, V., J. A. V. Windheim, and K. Das. “Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond.” IEEE Transactions on Electron Devices 40, no. 8 (1993): 1556–58. https://doi.org/10.1109/16.223722.
Venkatesan V, Windheim JAV, Das K. Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond. IEEE Transactions on Electron Devices. 1993;40(8):1556–8.
Venkatesan, V., et al. “Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond.” IEEE Transactions on Electron Devices, vol. 40, no. 8, 1993, pp. 1556–58. Scival, doi:10.1109/16.223722.
Venkatesan V, Windheim JAV, Das K. Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond. IEEE Transactions on Electron Devices. 1993;40(8):1556–1558.
Published In
IEEE Transactions on Electron Devices
DOI
Publication Date
1993
Volume
40
Issue
8
Start / End Page
1556 / 1558
Related Subject Headings
- Applied Physics
- 0906 Electrical and Electronic Engineering