Electrical characterization of semiconducting diamond thin films and single crystals

Published

Journal Article

Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). Results for natural diamonds indicated that the average compensation for a type IIb diamond was >17%. Mobilities for the natural crystals varied between 130 and 564 cm2/V·s at room temperature. The uncompensated dopant concentration obtained by C-V measurements (2.8 ± 0.1 × 1016 cm-3) was consistent with the atomic B concentration measured by SIMS performed on similar samples (3.0 ± 1.5 x 1016 cm-3). Measurement of barrier heights for three different metals (platinum, gold, and aluminum) found essentially the same value of 2.3 ± 0.1 eV in each case, indicating that the Fermi level was pinned at the diamond surface. Polycrystalline semiconducting diamond thin films demonstrated a complex carrier concentration behavior as a function of dopant density. This behavior may be understood in terms of a grain boundary model previously developed for polycrystalline silicon, or by considering a combination of compensation and impurity band conduction effects. The highest mobility measured for a polycrystalline sample was 10 cm2/V·s, indicating that electrical transport in the polycrystalline material was significantly degraded relative to the single crystal samples. © 1993 The Mineral,Metal & Materials Society,Inc.

Full Text

Duke Authors

Cited Authors

  • Von Windheim, JA; Venkatesan, V; Malta, DM; Das, K

Published Date

  • April 1, 1993

Published In

Volume / Issue

  • 22 / 4

Start / End Page

  • 391 - 398

Electronic International Standard Serial Number (EISSN)

  • 1543-186X

International Standard Serial Number (ISSN)

  • 0361-5235

Digital Object Identifier (DOI)

  • 10.1007/BF02661667

Citation Source

  • Scopus