High-conductance, low-leakage diamond Schottky diodes

Published

Journal Article

Schottky diodes formed of Al, Au, and Hg on diamond have been characterized as a function of plasma treatment and thermal annealing. Plasmas formed from N2O, H2, or O2 result in high surface leakage, while plasmas formed from N2 or from CF4 with 8.5% O 2 result in total leakage <1000 e/s. Annealing the diamond at 660°C before the Schottky diode is fabricated causes an increase in the forward conductance with n-factors approaching one. This annealing removes a compensated subsurface layer that often occurs in diamond during normal processing.

Full Text

Duke Authors

Cited Authors

  • Geis, MW; Efremow, NN; Von Windheim, JA

Published Date

  • December 1, 1993

Published In

Volume / Issue

  • 63 / 7

Start / End Page

  • 952 - 954

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.109855

Citation Source

  • Scopus