Removal and Preparation of Electrodeposited Semiconductors for High Impedance Hall Effect Measurements
The preparation of electrodeposited semiconductors for Hall effect measurements is complicated by the fact that these materials are, by necessity, attached to highly conducting substrates. As a result, methods were developed to reproducibly remove large area samples from their conducting substrates, and suitably prepared samples were used for temperature-dependent Hall measurements and resistivity measurements. Apparatus was designed and built to routinely measure Hall voltages as low as 250 μV for source impedances up to 1012Ω using films about 1 |μm in thickness. Measurements were performed on numerous electrodeposited materials: CdTe, CdS, CdSe, and HgxCd(1-x)Te. Argon annealed electrodeposited CdTe was found to be consistently p-type, with resistivity values typically 106–107 Ω - cm p → n conversion of CdTe was achieved by diffusion of Cd at high temperature. HgxCd(i_x)Te was also p-type, but had much lower resistivity and higher carrier concentration than CdTe. CdS and CdSe were both n-type with carrier concentrations typically 1016 cm-3 and 1014-1016 cm’3, respectively. © 1991, The Electrochemical Society, Inc. All rights reserved.
Von Windheim, JA; Wynands, H; Cocivera, M
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