Photoelectrochemical Deposition of Cadmium Telluride Using Tri-N-Butylphosphine Telluride

Published

Journal Article

Thin film cadmium telluride has been deposited cathodically on titanium in a photoelectrochemical cell (PEC) using a propylene carbonate solution of Cd(II) and tri-n-butylphosphine telluride (BPT) at 100°C. Illumination of the cathode enhances the cathodic current relative to that observed during the dark process. Furthermore, the current under illumination decreases more slowly than it does for the dark process, providing thicker films in a shorter time. Under illumination, the Te/Cd ratio of the film is independent of light intensity and applied potential in the range, -0.8 to -1.4V (Ag/AgCl). This ratio and the deposition current depend on the concentration of cadmium ion relative to that for BPT. Thicknesses of ca. 0.5 μm are obtained in 15 min for films that have a Te/Cd ratio of ca. 1.0. Cyclic voltammetry (CV) indicates that Cd (II) and BPT form a complex that is involved in the electron transfer process. A mechanism consistent with these results is proposed. © 1987, The Electrochemical Society, Inc. All rights reserved.

Full Text

Duke Authors

Cited Authors

  • Von Windheim, J; Cocivera, M

Published Date

  • January 1, 1987

Published In

Volume / Issue

  • 134 / 2

Start / End Page

  • 440 - 443

Electronic International Standard Serial Number (EISSN)

  • 1945-7111

International Standard Serial Number (ISSN)

  • 0013-4651

Digital Object Identifier (DOI)

  • 10.1149/1.2100475

Citation Source

  • Scopus