Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers

Journal Article

A large variation in the dispersion data for AlxGa1.0-xN epitaxial layers is presented. An experimental study is conducted which no(λ) and ne(λ) were measured to an accuracy of approximately ±0.01 for five AlxGa1.0-xN MOCVD-grown layers on sapphire substrates with 450<λ<980 nm. The uncertainty in the index of the rutile TiO2 prism limited the absolute accuracy of the measurements. The relative accuracy between the dispersion curves is approximately ±0.0005 and the accuracy of the Al molar concentration x is ±10%. Simple functions were discussed that allow convenient calculation of the refractive indices as functions of x and λ.

Full Text

Duke Authors

Cited Authors

  • Bergmann, MJ; Özgür, U; Casey, HC; Everitt, HO; Muth, JF

Published Date

  • July 5, 1999

Published In

Volume / Issue

  • 75 / 1

Start / End Page

  • 67 - 69

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.124278

Citation Source

  • Scopus