Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells

Journal Article

Subpicosecond wavelength-degenerate differential transmission optical spectroscopy was used to characterize the electron capture time in a 10-period InxGa1-xN multiple-quantum-well (MQW) structure. Photoluminescence and photoluminescence excitation spectroscopies demonstrated enhanced MQW emission for injection within ±50 meV of the barrier energy. Time-resolved differential transmission measurements for excitation in this region reveal efficient electron capture in the quantum wells with a time constant between 310 and 540 fs. A slower exponential relaxation, with strongly wavelength-dependent subnanosecond decay constants, is also observed. © 2000 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Özgür, U; Bergmann, MJ; Casey, HC; Everitt, HO; Abare, AC; Keller, S; DenBaars, SP

Published Date

  • July 3, 2000

Published In

Volume / Issue

  • 77 / 1

Start / End Page

  • 109 - 111

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.126893

Citation Source

  • Scopus