Ultrafast optical characterization of carrier capture times in InxGa1-xN multiple quantum wells
Journal Article
Subpicosecond wavelength-degenerate differential transmission optical spectroscopy was used to characterize the electron capture time in a 10-period InxGa1-xN multiple-quantum-well (MQW) structure. Photoluminescence and photoluminescence excitation spectroscopies demonstrated enhanced MQW emission for injection within ±50 meV of the barrier energy. Time-resolved differential transmission measurements for excitation in this region reveal efficient electron capture in the quantum wells with a time constant between 310 and 540 fs. A slower exponential relaxation, with strongly wavelength-dependent subnanosecond decay constants, is also observed. © 2000 American Institute of Physics.
Full Text
Duke Authors
Cited Authors
- Özgür, U; Bergmann, MJ; Casey, HC; Everitt, HO; Abare, AC; Keller, S; DenBaars, SP
Published Date
- July 3, 2000
Published In
Volume / Issue
- 77 / 1
Start / End Page
- 109 - 111
International Standard Serial Number (ISSN)
- 0003-6951
Digital Object Identifier (DOI)
- 10.1063/1.126893
Citation Source
- Scopus