Postgrowth in situ chlorine passivation for suppressing surface-dominant transport in silicon nanowire devices

Journal Article (Journal Article)

We demonstrate a postgrowth in situ chlorine passivation method for suppressing surface-dominant transport in Si nanowires (SiNWs). This scheme helps avoid misorientations and meandering while facilitating the passivation of surface states. The leakage current of bridged SiNWs exhibited close to five orders of magnitude reduction as a result of chlorine passivation. The micro-Raman spectroscopy clearly reveals the nature of the varieties of silicon-chlorine bonds of the passivated devices. The chlorine-passivated SiNW surfaces are found to be stable over a long period of time with high immunity to environmental degradation. The chlorine passivation implies an effective and reliable method that can be tailored for mass manufacturing of nanowire-based devices. © 2012 IEEE.

Full Text

Duke Authors

Cited Authors

  • Kim, JY; Kwon, MK; Vj, L; Grego, S; Saif Islam, M

Published Date

  • July 17, 2012

Published In

Volume / Issue

  • 11 / 4

Start / End Page

  • 782 - 787

International Standard Serial Number (ISSN)

  • 1536-125X

Digital Object Identifier (DOI)

  • 10.1109/TNANO.2012.2197683

Citation Source

  • Scopus