Postgrowth in situ chlorine passivation for suppressing surface-dominant transport in silicon nanowire devices
We demonstrate a postgrowth in situ chlorine passivation method for suppressing surface-dominant transport in Si nanowires (SiNWs). This scheme helps avoid misorientations and meandering while facilitating the passivation of surface states. The leakage current of bridged SiNWs exhibited close to five orders of magnitude reduction as a result of chlorine passivation. The micro-Raman spectroscopy clearly reveals the nature of the varieties of silicon-chlorine bonds of the passivated devices. The chlorine-passivated SiNW surfaces are found to be stable over a long period of time with high immunity to environmental degradation. The chlorine passivation implies an effective and reliable method that can be tailored for mass manufacturing of nanowire-based devices. © 2012 IEEE.
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- Nanoscience & Nanotechnology
- 4009 Electronics, sensors and digital hardware
- 1007 Nanotechnology
- 0906 Electrical and Electronic Engineering
- 0303 Macromolecular and Materials Chemistry
Citation
Published In
DOI
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Nanoscience & Nanotechnology
- 4009 Electronics, sensors and digital hardware
- 1007 Nanotechnology
- 0906 Electrical and Electronic Engineering
- 0303 Macromolecular and Materials Chemistry