Wear-out and stress-induced leakage current of ultrathin gate oxides

Conference Paper

Full Text

Duke Authors

Cited Authors

  • Thees, HJ; Osburn, CM; Shiely, JP; Massoud, HZ

Published Date

  • 1996

Published In

  • Physics and Chemistry of Sio(2) and the Si Sio(2) Interface 3, 1996

Volume / Issue

  • 96 / 1

Start / End Page

  • 677 - 686

International Standard Book Number 10 (ISBN-10)

  • 1-56677-151-X