Wear-out and stress-induced leakage current of ultrathin gate oxides
Conference Paper
Full Text
Duke Authors
Cited Authors
- Thees, HJ; Osburn, CM; Shiely, JP; Massoud, HZ
Published Date
- 1996
Published In
- Physics and Chemistry of Sio(2) and the Si Sio(2) Interface 3, 1996
Volume / Issue
- 96 / 1
Start / End Page
- 677 - 686
International Standard Book Number 10 (ISBN-10)
- 1-56677-151-X