A simple model of the chemical nature of bonds at the Si-SiO2 interface and its influence on the electronic properties of MOS devices

Published

Conference Paper

Full Text

Duke Authors

Cited Authors

  • Massoud, HZ

Cited Editors

  • Garfunkel, E; Gusev, E; Vul, A

Published Date

  • January 1, 1998

Published In

  • Fundamental Aspects of Ultrathin Dielectrics on Si Based Devices

Volume / Issue

  • 47 /

Start / End Page

  • 103 - 116

Published By

Pages

  • 14

International Standard Book Number 10 (ISBN-10)

  • 0-7923-5007-3

Conference Name

  • NATO Advanced Research Workshop on Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices - Towards an Atomic Scale Understanding

Conference Location

  • ST PETERSBURG, RUSSIA

Conference Start Date

  • August 4, 1997

Conference End Date

  • August 8, 1997