Pre-bond probing of through-silicon vias in 3-D stacked ICs
Through-silicon via (TSV)-based 3-D stacked ICs are becoming increasingly important in the semiconductor industry, yet pre-bond testing of TSVs continues to be difficult with current technologies. In this paper, we present a test and discrete Fourier transform method for pre-bond testing of TSVs using probe technology. We describe the on-die test architecture and probe technique needed for TSV testing, in which individual probe needles make contact with multiple TSVs at a time. We also describe methods for capacitance and resistance measurements, as well as stuck-at and leakage tests. Simulation results using HSPICE are presented for a TSV network. We demonstrate that we can achieve high resolution in these measurements, and therefore high accuracy in defect detection when we target one or multiple TSVs at a time. We also show that the test outcome is reliable even in the presence of process variations or multiple defective TSVs. © 1982-2012 IEEE.
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