Pre-bond probing of through-silicon vias in 3-D stacked ICs

Published

Journal Article

Through-silicon via (TSV)-based 3-D stacked ICs are becoming increasingly important in the semiconductor industry, yet pre-bond testing of TSVs continues to be difficult with current technologies. In this paper, we present a test and discrete Fourier transform method for pre-bond testing of TSVs using probe technology. We describe the on-die test architecture and probe technique needed for TSV testing, in which individual probe needles make contact with multiple TSVs at a time. We also describe methods for capacitance and resistance measurements, as well as stuck-at and leakage tests. Simulation results using HSPICE are presented for a TSV network. We demonstrate that we can achieve high resolution in these measurements, and therefore high accuracy in defect detection when we target one or multiple TSVs at a time. We also show that the test outcome is reliable even in the presence of process variations or multiple defective TSVs. © 1982-2012 IEEE.

Full Text

Duke Authors

Cited Authors

  • Noia, B; Chakrabarty, K

Published Date

  • March 25, 2013

Published In

Volume / Issue

  • 32 / 4

Start / End Page

  • 547 - 558

International Standard Serial Number (ISSN)

  • 0278-0070

Digital Object Identifier (DOI)

  • 10.1109/TCAD.2012.2226455

Citation Source

  • Scopus