Growth of high density aligned long single walled carbon nanotubes on quartz substrates using copper catalyst
A method to grow high density perfectly-aligned single walled carbon nanotubes uniformly over large areas using catalyst like Cu, Mo and Mn is invented. The density of the parallel nanotubes can reach 10-50 nanotubes per micron width. The length of the nanotubes can reach several millimeters with their direction controlled by the lattice structure of the substrate surface. The method uses low cost catalysts and carbon precursors, well suited for full wafer scale growth at low cost. Such well aligned nanotubes can be directly used to fabricate high current electronic devices such as high current Field effect transistors and chemical/biological sensors.